Features
Power_electronics Features

BEV advancements are driving sales, but vehicle safety and reliability will ensure long-term viability
Innovative power architectures using power modules provide power redundancy and improve overall safety and system performance By Patrick Kowalyk, Automotive FAE,Vicor
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
 
GaN power ICs enable MHz switching frequencies
Pure play- power semiconductor company, Navitas claimed to have developed the industry’s first GaNSense half-bridge power ICs. They enable a new level of MHz switching frequencies while “dramatically reducing” the system cost and complexity, says the company.

The half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection and level-shift isolation. Initially the company is introducing the NV6247, rated at 650V, 160mΩ (dual) and the NV6245C, rated at 275 mΩ (dual). Both are offered in an industry standard, low profile, low inductance, 6.0 x 8.0mm PQFN package.

The single package reduces component count and footprint by over 60% compared to existing discretes, which cuts system cost, size, weight, and complexity, according to Navitas. GaNSense technology enables autonomous protection for increased reliability and robustness, and also delivers loss-less current sensing for higher levels of efficiency and energy savings. The high level of integration also eliminates circuit parasitics and delays to achieve MHz frequency operation for AC/DC power topologies including LLC resonant, asymmetric half-bridge (AHB) and active-clamp flyback (ACF). The half-bridge ICs are also suitable for totem pole PFC and motor-drive applications.

The half-bridge ICs are expected to be specified in mobile fast chargers, consumer power adapters, data centre power supplies, solar inverters, energy storage and EV applications.

According to Navitas’ CEO, Gene Sheridan, GaN is the second revolution in power, following the replacement of bipolar transistors with silicon MOSFETs over 40 years ago. It offers “a huge increase in switching frequency and efficiency, and major reductions in system size and cost,” he says. “Our initial GaNFast ICs enabled an increase from 50 to 60kHz to 200 to 500 kHz, and now the GaNSense half-bridges elevate those benefits to the MHz range”.

The NV6247 is immediately available in production with 16-week lead times, while the NV6245C is sampling to select customers and will be broadly available in production to all customers in Q4 2022.

The company also announced that it will introduce a “wide range of package styles and power levels” to the GaNSense half-bridge IC family.

 

 



View PDF
 
Go Back   
Newsletter sign up

Sponsors