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NewSpace demands low voltage, high current power for performance and longevity - Nov 2022
Matt Renola, Senior Director, Global Business Development – Aerospace & Defense
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Power Electronics Europe News
 
2-kV SiC MOSFETs Enable Single-Level 1500-V Solar Inverters

The increasing demand for high-power density is pushing developers to adopt 1500-VDC link to increase the rated power-per-inverter and reduce system costs. However, 1500-VDC based systems also pose more challenges on the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads to a complicated design and a relatively high number of components.

At PCIM Infineon Technologies introduced an expanded SiC portfolio with high-voltage (2 kV) to provide devices for next-generation photovoltaic, EV charging and energy storage systems with reduced component count due to possible single-level topologies compared to two-level designs commonly used today. The internal rugged body diode is suitable for hard switching. The technology enables sufficient overvoltage margin and offers ten times lower FIT rate caused by cosmic ray, compared to 1700 V SiC MOSFETs. Furthermore, the extended gate voltage operating range makes the devices easy to use.

The new SiC MOSFET chip is based on Infineon’s M1H technology enabling a significantly larger gate voltage window that improves the on-resistance for a given die size. Simultaneously, the larger gate voltage window provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at high switching frequencies. A range of EiceDRIVER gate drivers with functional isolation of up to 2.3 kV support the 2 kV SiC MOSFETs.

Samples of the 2 kV CoolSiC MOSFETs are available now in EasyPACK 3B and 62 mm modules, and later in a new high-voltage discrete TO247-PLUS package. In addition, Infineon offers a design-in eco-system with a 2.3 kV isolation-capable EiceDRIVER. The start of production of the Easy 3B (DF4-19MR20W3M1HF_B11), a power module with 4 boost circuits that acts as the MPPT stage of a 1500 V PV string inverter, is planned for Q3 2022, with the 62 mm module in half-bridge configuration (3, 4, 6 mΩ) to follow in Q4 2022. The discrete devices utilizing the .XT interconnection technology will be available by the end of 2022. AS

www.infineon.com/CoolSiC

 



 
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