40 to 140V N-channel MOSFETs exhibit low RDS(on)

5 June 2023  

There are 13 40 to 140V N channel MOSFETs in the RS6xxxxBx / RH6xxxxBx series, announced by Rohm Semiconductor. They are available in 40, 60, 80, 100 and 150V inputs and are suitable for applications operating on 24, 36 and 48V. Target applications are base stations, servers and motors for industrial and consumer equipment.

They are designed with copper clip connections and improved gate structure claimed to counter RDS(on) and gate drain charge (Qgd) which increase in proportion to chip size. The MOSFETs are large enough in size to drive industrial equipment at lower power losses.

They achieve an industry-leading RDS(on) of 2.1mΩ, claims the company, which is approximately 50% lower than conventional MOSFETs with the adoption of the HSOP8/HSMT8 package with low-resistance copper clip connections. The improved element gate structure reduces Qgd by approximately 40% compared with conventional products, reports the company, to reduce both switching and conduction losses.  

In comparison to a power supply evaluation board for industrial equipment, the RS6xxxxBx / RH6xxxxBx MOSFETs achieve approximately 95% efficiency (peak) in the output current range during steady-state operation.