Accelerating the Adoption of High-Voltage SiC Power Modules
12 March 2024 
The highly integrated 3.3 kV XIFM plug-and-play digital gate driver is designed to work out-of-the-box with high-voltage SiC-based power modules to simplifyand speed system integration
The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles.
To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design claims to be already completed with this plug-and-play solution. This digital gate driver is reportedly a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
It claims to incorporate 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC).
For more information, visit www.microchip.com.