Alpha and Omega Semiconductor Unveils its Powerful aMOS E2 600V Super Junction MOSFET Platform
28 January 2026 
Alpha and Omega Semiconductor (AOS) a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, has announced it has unveiled its powerful aMOS E2 600V Super Junction MOSFET platform.
AOS says the first high-voltage product from the newly developed platform is its AOTL037V60DE2. 600V MOSFET, designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems.
The company says the design challenges of today’s midâ to highâpower switchedâmode power supplies (SMPS) and solar inverter systems can be distilled into four key requirements: the need for higher efficiency, greater power density, lower overall system cost, and uncompromised robustness. To meet these expectations, HighâVoltage Super Junction MOSFETs have become the preferred devices for critical topologies, including the slow leg of totemâpole PFC, LLC resonant converters, PSFB, and cycloâconverters.
AOS says it engineered its advanced aMOS E2 HighâVoltage Super Junction MOSFET platform with a robust intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as shortâcircuits or startâup transients.
AOS says the AOTL037V60DE2, available in a TOLL package, features a maximum RDS(ON) of 37 milliohms and in evaluations conducted by its application engineering team, the body diode ruggedness of this aMOS E2 MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current (IF) conditions at a junction temperature of 150⯰C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer ShortâCircuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater systemâlevel reliability, ensuring robust performance even under abnormal operating scenarios.
“We designed this platform and the first high-voltage MOSFET to address the needs of traditional AC/DC power supplies, as well as DC/DC converters and DC/AC inverters, where achieving high power density and efficiency remains a critical challenge. Leveraging AOS’ extensive MOSFET engineering expertise, we know the breakthrough capabilities of aMOS E2™ HighâVoltage Super Junction MOSFET platform and the AOTL037V60DE2 solve these challenges enabling mid- to high-power application designers of power supplies, solar PV inverters, and DC/DC converters to effectively satisfy today’s and future power efficiency, durability and lower cost demands,” said Simon Yu, Senior Product Line Manager at AOS.