EPC Launches its First Seventh-Generationâ¯(Gen 7) eGaN Power Transistor, the 40â¯V EPC2366, into Mass Production
4 February 2026 Efficient Power Conversion (EPC), a world leader in enhancement-mode gallium nitride (eGaN) power devices, has announced the start of volume production of the EPC2366, the first of its seventh-generation (Genâ¯7) eGaN family of power transistors.
The company says this seventh-generation platform delivers a new state-of-the art in transistor performance. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84â¯mΩ and a highly optimised RDS(on) × QG figure of merit (FoM) < 12 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.
It supports drain-to-source voltages up to 40â¯V and transient voltages up to 48â¯V, with continuous drain currents up to 88â¯A and pulsed currents of 360â¯A, making it well suited for the most demanding power systems.
The device is thermally optimised for high power density thanks to its small 3.3 × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W.
According to Alex Lidow, CEO and Co-founder of EPC, “We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026.”
To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.