FET packs power into a small footprint for wireless transfer
17 September 2015 
The high power density eGaN (enhancement-mode gallium nitride) FET measures just 1.82mm2 , yet delivers 80VDS, 6.8A with a maximum RDS(on) of 22mΩ with 5V applied to the gate.
The company believes that the high performance in power conversion systems is due to its high switching capabilities in a very small package. It can be used for high frequency power conversion applications, such as synchronous rectification, Class-D audio, high voltage buck converters, wireless charging, and pulsed power (LiDAR) applications, which is used in emerging applications such as driverless vehicles and augmented reality.