Integrated FETs use 25V technology to boost efficiency

2 July 2018  

The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (Rdson x Qg), suitable for server and telecommunications applications. It allows new designs to operate at higher switching frequencies, says the company. 

The device includes a low-side and high-side MOSFET in a leadless surface mount package, with a 5.0 x 6.0mm outline.

The AONX38168 uses 25V n-channel MOSFET technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, for synchronous DC/DC converter applications.

The MOSFET is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. It offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI, claims the company.

The AONX38168 is immediately available in production quantities with a lead-time of 12 to 14 weeks.