MOSFET package to meet designers’ demand for increased power density
29 March 2024 
Infineon claims to meet designers demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs claim to offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are reportedly ideal for solar (e.g. string inverters) as well as energy storage systems and EV charging applications.
The CoolSiC MOSFET 2000 V product family is said to be ideally suited to high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs claim to deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation. and also claim that the .XT connection technology offer first-class thermal performance as well as highly resistant to humidity.
for more information visit: www.infineon.com/coolsic-mosfet-discretes.