N-channel enhancement-mode power MOSFETs
11 March 2014 APEC (Advanced Power Electronics Corp. USA) has launched cost-effective, N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance.
The AP99T03GS-HF-3 MOSFET comes in a TO-263 package, used for commercial and industrial surface-mount applications. Devices are well-suited for low voltage applications such as DC/DC converters, and are also available as the AP99T03GP-HF-3 in a TO-220 through-hole package which is intended for applications where a small PCB footprint or an attached heatsink is required.
Both MOSFETs benefit from simple drive requirements and offer a fast switching performance, very low on-resistance of 2.5 mΩ, a breakdown voltage of 30 V, and a continuous drain current of 120 A. The components are halogen-free and fully RoHS-compliant.