N-channel MOSFET suits LV applications
24 July 2014 
Advanced Power Electronics Corp. (USA) claims that its N-channel, enhancement-mode power MOSFET is cost-effective and offers a fast switching performance and low on-resistance for LV (low voltage) applications such as DC/DC converters and load switching. The AP100T03GP-HF-3 is supplied in a TO-220 through-hole package for commercial and industrial surface-mount applications requiring a small PCB footprint or an attached heatsink. Itbenefits from simple drive requirements, says the company, and offers a fast switching performance, low on-resistance of 2.1mΩ, a drain-source breakdown voltage of 30V, and a continuous drain current of 215A. The component is halogen-free and RoHS-compliant.