N-channel MOSFETs reduce heat dissipation
17 January 2017 
The SSM6K513NU and SSM6K514NU use U-MOS IX-H series trench process. According to Toshiba Electronics Europe, it ensures that the MOSFETs achieve low on-resistances, claims the company.
RDS(ON) rating are 6.5mOhm for the 30V SSM6K513NU and 8.9mOhm for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40 per cent when compared with the company’s existing products.
The SSM6K513NU and SSM6K514NU can be used in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C and USB Power Delivery (PD) standards.
Both MOSFETs are housed in compact SOT-1220 packages.