Navitas’ latest SiCPAK power modules set a new standard for unparalleled reliability & efficient high-temperature performance

23 April 2025  

 Navitas Semiconductor, a pure-play, next-generation power semiconductor company and an industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced the release of its latest SiCPAK power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that has been rigorously designed and validated for the most demanding high-power environments, prioritising reliability and high-temperature performance.

The company says target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimisers, energy storage systems (ESS), industrial welding, and induction heating.

The new portfolio of 1200V SiCPAK power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.

Navitas’ SiCPAK modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to  125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK epoxy-resin potted modules reportedly maintained acceptable isolation levels.

 Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC ‘trench-assisted planar SiC MOSFET technology’ provides a leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.

 The company says the ‘trench-assisted planar’ technology enables an extremely low R_DS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower R_DS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC SiC MOSFETs reportedly have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.

 The 1200V SiCPAK power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.

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