The patented Shield Gate technology is optimised for the higher switching frequencies used in telecomms and server power supplies to achieve higher efficiency compared to the previous generation of power MOSFETs, explains the company. 

It also has lower switching losses in hard switching, topologies and less voltage overshoot than the earlier generation. This improved performance from light load operation and throughout the load range results in levels of power density and energy efficiency sufficient for solar, power supplies, and battery power applications such as in e-scooters.

The AONR66820 and AONS66811 are supplied in DFN packages measuring 3.3 x 3.3mm and 5.0 x 6.0mm, respectively. AONR66820 is suitable for isolated DC/DC converters used in telecomms applications. The AONS66811 is appropriate for synchronous rectification and provides improved reverse recovery charge and reduced voltage overshoot, for higher efficiency to the power supply.

A third power MOSFET, the AOTL66810 (80V) is in a TOLL package which has approximately 25% smaller footprint than a standard wire-bonded TO-263 (D2PAK) package. It offers a high power density and is suited to industrial brushless DC (BLDC) motor applications and battery management to reduce the number of MOSFETs in parallel. It has a 1.25mΩ max at 10Vgs with a maximum drain current of 420A at 25°C. The pulsed current at 1700A, is limited by the maximum junction temperature of 175°C.

“The AOTL66810 simplifies new designs to enable savings in overall system cost due to a reduced number of devices in parallel.  AOS’s TOLL package is best suited for high power applications,” said Peter H. Wilson, director of LV/MV MOSFETs at AOS.

The AOTL66810, AONS66811 and AONR66820 are immediately available in production quantities.