The SiHP054N65E and other devices in the fourth generation 650V E series address the need for efficiency and power density improvements in two of the first stages of the power system architecture, i.e., power factor correction (PFC) and subsequent DC/DC converter blocks.

They are built using Vishay's energy-efficient E Series super junction technology and deliver low typical on-resistance of 0.051Ω at 10V for a higher power rating for applications below 2kW. This also allows the device to address the Open Compute Project's Open Rack V3 (ORV3) standards.

The gate charge is down to 72nC. The resulting figure of merit of 3.67Ω*nC is 1.1% lower than the closest competing MOSFET in the same class, says Vishay, which translates into reduced conduction and switching losses. The energy savings and increased efficiency allow the device to address the specific titanium efficiency requirements in server power supplies or reach 96% peak efficiency in telecomms power supplies.

For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFETs provide low typical effective output capacitances Co(er) and Co(tr) of 115pF and 772pF, respectively. The resulting resistance times Co(er) figure or merit is an industry-low 5.87Ω*pF, says Vishay.

The MOSFETs are offered in the TO-220AB package, providing increased dv/dt ruggedness and are RoHS-compliant and halogen-free. They are designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

Typical applications include servers, edge computing, and data storage, UPS, high intensity discharge (HID) lamps and fluorescent ballast lighting, solar inverters, motor drives, battery chargers, induction heating and welding equipment.

Samples and production quantities are available now.