The SSM10N961L is the first 30V N-channel common-drain MOSFET released by Toshiba Electronics Europe. It has been developed in response to the need for devices with USB charging to support bi-directional power to support the USB Power Delivery (USB PD) standard which supports higher power levels from 15W (5V / 3A) to 240W (48V / 5A) and allows swapping of the power supply and receiving side.

It joins the company’s N-channel common-drain 12V MOSFETs which are primarily intended for the protection of Li-ion battery packs in smartphones. This 30V MOSFET can be used for applications requiring higher voltages, such as load switching for power lines of USB charging devices as well as protecting Li-ion battery packs for battery powered appliances.

The SSM10N961L combines two N-channels in a common-drain configuration to allow for bi-directional operation. The source-source breakdown voltage (V(BR)SSS) is 30V and to reduce losses, the source-source on-resistance (RSS(ON) is typically 9.9mΩ.

When mounted on a 18µm, 407mm² Cu pad, the current rating of the device is 9.0A. When these parameters are increased to 70µm and 687.5mm², the current rating increases to 14.0A.

The MOSFET is housed in a small, thin package (TCSPAG-341501) measuring just 3.37 x 1.47 x 0.11mm, facilitating high-density designs.

By combining the SSM10N961L with a TCK42xG driver IC it is possible to form a load switching circuit with a backflow prevention function or a power multiplexer circuit that can switch operations between make-before-break (MBB) and break-before-make (BBM).

A power multiplexer circuit combining the two is available as a reference design. The operation of the circuit has been verified by Toshiba, to simplify the design process and shorten development time.

The SSM10N961L is shipping now.