The industrial-grade 10A, 650V SiC Schottky diodes are designed for power applications which require high performance, low loss and high efficiency. Suitable applications include switched-mode power supplies, AC/DC and DC/DC converters, battery charging infrastructure, uninterruptible power supplies and photovoltaic inverters. For sustainable operations in data centres, for example, power supplies designed using Nexperia's PSC1065K SiC Schottky diode will be better placed to meet rigorous energy efficiency standards than those using solely silicon-based solutions, said Nexperia.

The PSC1065K delivers temperature-independent capacitive switching and zero recovery behaviour with switching performance almost entirely independent of current and switching speed variations. Its merged PiN Schottky (MPS) structure provides additional benefits, such as outstanding robustness against surge currents that eliminates the need for additional protection circuitry. These benefits significantly reduce system complexity, claims the company, and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high power applications.  

The SiC Schottky diode is encapsulated in a real-2-pin (R2P) TO-220-2 through hole power plastic package. Additional package options include the surface mount (DPAK R2P and D2PAK R2P) and through hole (TO-247-2) with a real-2-pin configuration that enhances reliability in high voltage applications at temperatures up to 175°C.

Nexperia plans to continuously augment its portfolio of SiC diodes by including automotive-grade parts that operate at 650 and 1200V with currents in the 6.0 to 20A range.

Samples and production quantities of the new SiC diodes are available now.