Power MOSFET increases efficiency and power density
11 March 2014 
The IRFH7185TRPbF 100V FastIRFET power MOSFET delivers benchmark performance for DC/DC power supplies in telecomms, claims International Rectifier. Using the company’s 100V FastIRFET process, it is claimed to offer ultra-low Rds(on) with significantly lower gate charge than alternative devices to enable high performance from light load to full load. The device structure offers a 20% improvement in avalanche current density to deliver the industry’s most robust solution for DC/DC telecomms power supplies. The MOSFET works with any controller or driver to offer design flexibility and is qualified to industrial grade and moisture sensitivity level 1 (MSL1). It is small, supplied in an industry standard 5×6 PQFN package that features an environmentally friendly, lead-free and RoHS compliant bill of materials.