Soft shutdown 110 kW IGBT driver ships
21 May 2014 Drivers include an integrated trigger mechanism which limits IGBT collector-emitter, or MOSFET source-drain voltages in the event of a short circuit.
Soft shudown is implemented on-chip without additional external circuitry by controlling the on-chip high-side N-Channel booster stage. Increasing the output impedance of the gate driver enables the IGBT or MOSFET to turn off with a reduced di/dt, thereby limiting the collector-emitter or source-drain over-voltage.
The first product to ship is the 2SC0106T2A0-12, a two-channel IGBT/MOSFET gate driver core for 1200V IGBTs in the 37 to 110kW range.