STGAP2GS GaN driver integrates galvanic isolation
12 July 2023 STMicroelectronics’ first galvanically isolated gate driver for GaN transistors, the STGAP2GS, has been developed for applications that demand superior wide bandgap efficiency with robust safety and electrical protection.
The single-channel driver can be connected to a high voltage rail up to 1200V. There is also a narrow body version, the STGAP2GSN, which operates up to 1700V. Both versions provide gate driving voltage up to 15V. It can sink and source up to 3A gate current to the connected GaN transistor to control switching transitions up to high operating frequencies.
Characterised by minimal propagation delay across the isolation barrier of 45ns, the STGAP2GS delivers a fast dynamic response and also has dV/dt transient immunity of ±100V/ns over the full temperature range to guard against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for tuning the gate driving operation and performance.
It also has a built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimised for GaN technology, to ensure reliability and ruggedness.
There is no need for discrete components to provide optical isolation, says the company. The company believes the driver can introduce GaN technology in a range of consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.
Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now.