Toshiba improves RDS(on) x QGD in third generation MOSFETs
31 August 2022 
According to the company, the MOSFETs leverage the company’s third generation SiC technology to boost the energy efficiency of high voltage industrial applications.
The TW015N120C, TW030N120C, TW045N120C, TW060N120C, and TW140N120C are suitable for use in equipment such as electric vehicle (EV) charging stations, photovoltaic (PV) inverters, industrial power supplies, uninterruptible power supplies (UPS) and bi-directional or half-bridge DC/DC converters.
The latest generation brings an improvement in RDS(on) x QGD (on resistance x gate-drain charge) figure of merit by more than 80 per cent to raise both conduction and switching performance in power conversion topologies.
RDS(on) values for the MOSFETs are from 15mΩ to 140mΩ (typical, at VGS = 18V) and drain current ratings are from 20A to 100A (DC at TC=25°C).
The SiC MOSFETs also contain the previous generation’s embedded Schottky barrier diode (SBD), which enhances reliability by overcoming internal parasitic effects to maintain a stable device RDS(on), said the company.
Maximum gate source voltage ranges from -10 to 25V, which enhances flexibility to operate in various circuit designs and application conditions. The gate threshold voltage (VGS(th)) is from 3.0 to 5.0V, which ensures predictable switching performance with minimal drift, claims the company, and permits a simple gate driver design.
All five SiC MOSFETs are in full production and ready to order from distributors, in the standard TO-247 power package.