Transphorm claims industry’s first 600V GaN transistor
18 March 2015 
It offers 63mΩ R(on) and 34A ratings and uses the company&rs source-tab connection design to reduce EMI at high dv/dt. This enables low switching loss and high-speed operation in power supply and inverter applications.
The device achieves an R(on) increase under switching of only 5% at 400V, compared to other competitively rated devices with an almost 90% increase, claims the company.