| Comparing N-Channel and P-Channel MOSFETs: Which is best for your application? |
June, 06 2024 |
| This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications. |
|
View PDF
|
|
|
| The art of noise: how to design to minimise interference - April 2024 |
April, 02 2024 |
| In a perfect world, signal margins and power supply voltages are maintained for a safe, stable environment, says Graeme Clark, Principal Engineer, Renesas Electronics |
|
View PDF
|
|
|
| Knightscope’s autonomous security robots patrol with superhuman acuity and detection prowess - May 2023 |
May, 02 2023 |
| A fusion of innovative robotics, self-driving technology, vehicle electrification and artificial intelligence |
|
View PDF
|
|
|
| EGaN FETs enable more than 4 kW/in3 power density for 48 V to 12 V power conversion - March 2023 |
February, 25 2023 |
| GaN transistors in Chip Scale Package (CSP) enable higher than 4 kW/in3 power density for 48V to 12V power conversion using an LLC resonant converter with up to 1 kW capability. |
|
View PDF
|
|
|
| A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21 |
October, 25 2021 |
| Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at ever-high currents. This article discusses the issues and introduces
a new Silicon Carbide semiconductor, the DG-FET as an enabler for better performance... |
|
View PDF
|
|
|
| Benefits of CoolSiC MOSFETs in Bi-Directional Inverter Applications - July 2021 |
June, 29 2021 |
| With the move to renewable energy, there is an increased focus not only on generation but also storage, to make the most of the intermittent supply from wind and solar. Batteries are the common solution and costs are dropping, driven by the technology improvements stemming from the EV market. This opens up
opportunities for energy storage at any scale, from domestic to utility.. |
|
View PDF
|
|
|
| New Developments in RET Technology - Feb/March 2021 |
March, 04 2021 |
| Resistor-Equipped Transistors (RETs) – also known as digital transistors or pre-bias transistors – offer many benefits, including saving space, reducing manufacturing costs and increased reliability.
This article looks at their structure and design considerations, and considers the suitability of new, 80 V parts that target emerging 48 V EV systems. |
|
View PDF
|
|
|
| GaN in Space Applications - Nov/Dec 2020 |
November, 20 2020 |
| Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design. |
|
View PDF
|
|
|
| Power Adapters Slim Down with GaN - October 2020 |
September, 30 2020 |
| Easy portability and a slim or compact outline are great design goals for external power adapters. In practice, success is always limited by the need for thermal management (large heatsinks) to ensure reliability and relatively large filter components to stabilize and smooth the DC power at the output. Advanced GaN power-semiconductor technology reduce size, weight, and increase energy-efficiency advantages... |
|
View PDF
|
|
|
| Evaluating Three Key Pieces of a SiC Total System Solution - October 2020 |
September, 30 2020 |
| Following a rapid expansion of SiC product options, the industry’s next challenge is simplifying the design-in process for end users. Power system developers need holistic solutions that address not only typical design elements individually but which recognise the importance of their interactions... |
|
View PDF
|
|
|
| Proving the Ruggedness of GaN technology in Automotive and Demanding Application - issue 4/2020 |
July, 28 2020 |
| To achieve the most efficient power conversion circuit requires the best semiconductor switch as the fundamental building block. Many people now consider gallium nitride to be a better switch than silicon. This is because GaN transistors feature a very low on-resistance and very high switching speeds; they are also rugged as they do not suffer avalanche breakdown of traditional MOSFETs. GaN is commonly used in RF and LED applications, yet employing GaN as a power technology brings new challenge |
|
View PDF
|
|
|
| SiC MOSFET Technology with Silicon-Like Reliability -issue 3/2020 |
July, 06 2020 |
| The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are focusing on the field of specific on-resistance as the major benchmark parameter for a given technology. However, it is essential to find the right balance between the primary performance indicators like resistance and switching losses and the additional aspects relevant for actual power electronics. |
|
View PDF
|
|
|
| Integrated GaN Power Stage for eMobility - issue 2/2020 |
June, 16 2020 |
| Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. To address these needs, inverters powering the motors need to operate at higher frequency, but require additional filtering to prevent excessive losses, EMI generation, and unwanted mechanical wear related to high frequency common mode and induced current... |
|
View PDF
|
|
|
| GaN for Power-Hungry 5G Base Stations - issue 2/2020 |
June, 16 2020 |
| There is a significant change currently underway in the world of mobile telecommunications: the rollout of the fifth generation of cellular network technology, otherwise known as 5G. Consumers are only just beginning to experience the benefits of 5G technology, which will not only enable ultrafast download speeds to rival fixed-line broadband, but will in future also support a much higher density of mobile and connected IoT devices within cellular network areas... |
|
View PDF
|
|
|
| A technology conquers power-hungry applications - issue 2/2020 |
June, 15 2020 |
| Gallium Nitride (GaN) power devices have opened many new applications since their commercial availability began in 2010. the superior switching speed of GaN devices and, as a result, their low switching losses gave the starting signal for the development of new applications such as lidar (light detection and ranging) sensors and resonant wireless power.. |
|
View PDF
|
|
|
| GaN-based switcher ICs empower next-generation power products - issue 1/2020 |
February, 19 2020 |
| There have been a number of disruptive advances in the power electronics community over the last 20 years.... |
|
View PDF
|
|
|
| SiC MOSFETs for Bridge topologies in three-phase power conversion - issue 6/2019 |
December, 09 2019 |
| Efficiency, productivity and legislation are the main drivers in power applications today. Making more out of less energy and saving costs is putting a greater focus on better conversion efficiency and smaller, lighter systems.. |
|
View PDF
|
|
|
| Why and How Isolated Gate drivers - issue 6/2018 |
November, 06 2018 |
| An IGBT/power MOSFET is a voltage-controlled device, which is used as a switching element in power circuits or motor drives. 'Gate' is the electrically isolated control terminal for each device... |
|
View PDF
|
|
|
| SiC Boost Converter with 3D-printed fluid coolers and inductor bobbins - issue 4/2018 |
August, 20 2018 |
| A highly integrated two-phase interleaved bidirectional boost converter using discrete SiC MOSFETs and 3D-printed fluid coolers as well as 3D-printed inductor bobbins was awarded as the best paper of PCIM 2018.... |
|
View PDF
|
|
|
| Silicon Carbide Gate Drivers - A disruptive technology in power electronics - issue 3/2018 |
May, 17 2018 |
| Silicon based power semiconductor switches have traditionally been and still are the primary choice for high-power application designers, who typically make this choice based on voltage and power ratings... |
|
View PDF
|
|
|
| New Isolation technology improves reliability and safety - issue 3/2018 |
May, 17 2018 |
| To ensure safe and reliable operation for industrial and automotive electrical systems, isolation is required between the high voltage, high power elements in a circuit and the low voltage sensing, processing and control elements.. |
|
View PDF
|
|
|
| An effective approach to controlling of multiple voltage rails - issue 4/2017 |
August, 29 2017 |
| The process of powering-up the various voltage rails that accompany system-on-chips (SoCs), field programmable gate arrays(FPGAs) and embedded modules in the correct order can be quite convoluted.. |
|
View PDF
|
|
|
| Air cooled SiC three level inverter reaches efficiency levels above 99 percent - issue 3/2017 |
June, 30 2017 |
| Power Electronics Europe has sponsored the best paper award of PCIM Europe 2017. At Siemens a dual three-phase 3-level inverter (2 x 27KW; input 600VDC; 2 x 400VAC 45 Arms) has been realised with the latest generation of planar SiC-MOSFETs... |
|
View PDF
|
|
|
| Low temperature silver sintering improves reliability of power semiconductors - issue 2/2017 |
April, 28 2017 |
| Reliability and lifetime of power semiconductors can be improved by using low temperature sintering on silver-containing layers.... |
|
View PDF
|
|
|
| High Quality 150mm SiC substrates for Power Electronics Applications - issue 4/2016 |
July, 28 2016 |
| Silicon Carbide (SiC) technology is being more broadly adopted by the power electronic market within applications rated at voltages of 600V or above, whereas silicon-based technology is still preferred for lower class voltage devices.... |
|
View PDF
|
|
|
| Low Voltage MOSFET's behaviour in FBSOA - issue 4/2016 |
July, 28 2016 |
| Power MOSFETs working in linear mode need to be correctly designed at the Silicon level in order to improve ruggedness to thermal instability phenomena... |
|
View PDF
|
|
|
| GaN Matures for industry with Monolithic Power ICs - May 2016 |
May, 26 2016 |
| Power GaN has come of age with high performance, high frequency and high reliability. It has taken over 15 years for the material to mature from university curiosity to industry-qualified product.... |
|
View PDF
|
|
|
| Optimising GaN Performance with integrated driver - May 2016 |
May, 26 2016 |
| Gallium Nitride (GaN) transistors can switch much faster than Silicon MOSFETs, thus having the potential to achieve lower switching losses. At high slew rates, however, certain package types can limit GaN FET switching performance. |
|
View PDF
|
|
|
| Robustness against parasitics by ROI - May 2016 |
May, 26 2016 |
| Monolithic level shifting gate driver ICs suffer heavily from the negative voltage which can occur at the high side reference pin, when standard IC technologies are used. |
|
View PDF
|
|
|
| Cross Switch XS - Silicon and Silicon Carbide Hybrid - issue 6/2015 |
November, 24 2015 |
| Due to the inherent advantages of wide bandgap (WBG) semiconductor materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), WBG based power devices are fabricated on much thinner and higher doped n-base regions when compared to Silicon... |
|
View PDF
|
|
|
| Efficiency revolution in Auxilliary and Standby Power Supplies - issue 6/2015 |
November, 24 2015 |
| The new Innoswitch TM-EP family of ICs simplify the development and manufacturing of low-voltage, high-current power supplies, particularly those in compact enclosures or with high efficiency requirements... |
|
View PDF
|
|
|
| Progress of GaN Transistors - issue 3/2015 |
June, 11 2015 |
| Over the last several years, GaN semiconductors have emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems.... |
|
View PDF
|
|
|
| How 600V GaN Transistors improve power supply efficiency and density - issue 2/2015 |
March, 11 2015 |
| High performance power supplies today are already very efficient. For at least 2 years , 'titanium' efficiency server power supplies have been announced with greater than 96 per cent overall energy efficiency at half load... |
|
View PDF
|
|
|
| SiC and GaN Semiconductors in modules for higher efficiency - issue 2/2015 |
March, 11 2015 |
| With the increasing availability of new semiconductor materials such as SiC and GaN the opportunity to design higher switching frequency circuits at higher power levels has become possible for power electronics design engineers.... |
|
View PDF
|
|
|
| Fast Thyristors for Induction Heating Solutions - issue 5/2014 |
August, 20 2014 |
| Induction heating is one of the key metal applications using high-power resonant converters. the power range of such converters goes up to 10 MW and there is no more efficient alternatives as switching device than the bipolar fast thyristor. |
|
|
|
|
| Fast Thyristors for Induction Heating Solutions - issue 5/2014 |
August, 20 2014 |
| Induction heating is one of the key metal applications using high-power resonant converters. the power range of such converters goes up to 10 MW and there is no more efficient alternatives as switching device than the bipolar fast thyristor. |
|
View PDF
|
|
|
| High-Voltage Switcher achieves 5 per cent current regulation accuracy - issue 5/2014 |
August, 00 2014 |
| In chargers it is often necessary to adjust the output current in addition to the output voltage.... |
|
View PDF
|
|
|
| GaN - Moving Quickly into entirely new markets - issue 4/2014 |
June, 18 2014 |
| Gallium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and speeds beyond the capability of Silicon power devices... |
|
View PDF
|
|
|
| A New Gate Driver IC Family that fits all - issue 3/2014 |
May, 29 2014 |
| Infineon Technologies presents the new EiceDRIVER compact family, a single channel gate driver IC for general purpose. The different variants of the family are intended to support discrete IGBTs, IGBT modules and MOS transistors.... |
|
View PDF
|
|
|
| Practical use of SiC Power Semiconductors - issue 1/2014 |
February, 10 2014 |
| Silicon carbide (SiC) power devices are enabling components mainly in the context of higher switching frequencies and/or small footprints in power electronics. However, this trend imposes news challenges on the packaging of the chips.... |
|
View PDF
|
|
|
| MOSFETs make step change in performance to meet new application requirements - issue 1/2014 |
February, 10 2014 |
| Low voltage MOSFET devices (less than 40V) are used extensively in the power systems of portable electronic devices, domestic appliances, data communication servers, medical equipment and telecomm infrastructure deployments... |
|
View PDF
|
|
|
| GaN Switching for Efficient Converters - issue 5/2013 |
August, 26 2013 |
| GaN transistor switching speeds of 50V per nanosecond and two orders of magnitude improvement inspecific on-resistance over Silicon devices improve volumetric and conversion efficiency in any power systems and has particular relevance to solar boost coverters.... |
|
View PDF
|
|
|
| Power GaN Opens New Applications - issue 4/2013 |
June, 20 2013 |
| Efficient Power Conversion Corportaion (EPC) has been in production with enhancement mode GaN-on-Silicon power transistors for over three years. Much progress has been made improving device performance and reliability... |
|
View PDF
|
|
|
| Progress in Silicon-Based 600V Power GaN - issue 4/2013 |
June, 20 2013 |
| The readiness of 600V GaN-on-Si based power devices fabricated using the GaNpowIR technology platform for large scale production is presented in this article. the advantages of such devices over Silicon incumbent alternatives in several common power application circuits is shown. |
|
View PDF
|
|
|
| GaN Transistors for efficient Power Conversion - issue 3/2013 |
May, 08 2013 |
| For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology and circuiot topologies paced the growing need for electrical power on our daily lives.... |
|
View PDF
|
|
|
| Industrial Grade 25 A Versatile Voltage Regulator - issue 3/2013 |
May, 08 2013 |
| At APEC International Rectifier introduced the IR3847 high current Point-of-Load(POL) integrated voltage regulator that extends the current rating of IR's third generation SupIRBuck family up to 25A in a compact 5x6 mm package.... |
|
View PDF
|
|
|
| Power Semiconductors on 300-Millimeter Wafers - issue 3/2013 |
May, 08 2013 |
| In February 2013 Infineon Technologies released the first products of the CoolMOS family being produced on its new 300-millimeter line at the Villach site in Austria. the production process based on the new technology has completed qualification and is now ready for delivery..... |
|
View PDF
|
|
|
| SiC Power Devices and Modules Maturing Rapidly - issue 1/2013 |
February, 26 2013 |
| The SiC power semiconductor industry has matured to a point which is surprising even industry analysts and leading to significant ($100M in 2010 and expected to eclipse $200M in 2013, $400M in 2015) market penetration according to industry analysts from IMS and Yole.... |
|
View PDF
|
|
|
| High-Speed TRENCHSTOP 5 IGBT - issue 8/2012 |
January, 03 2013 |
| IGBTs are historically known for having long tail currents with focus on drive applications and anything switching up to 30kHz was known as 'High Speed', where conduction losses were penalized to get switching losses down.... |
|
View PDF
|
|
|
| 3D-GaN Technology for GaN-on-Silicon - issue 7/2012 |
November, 30 2012 |
| Today, the technical and electrical advantages of the AlGaN/GaN devices are understood and deployed successfully in RF applications. To make these devices commercially successful for high voltage applications, new aspects need to be considered.... |
|
View PDF
|
|
|
| Current Handling Capability of 600V GaN High Electron Mobility Transistors - issue 7/2012 |
November, 30 2012 |
| The development of think, crack-free Gallium Nitride (GaN) epitaxy on standard thickness Silicon (Si) substrates, together with device fabrication in high volume silicon CMOS factories, has opened the potential for highly cost competitive, high voltage GaN devices. |
|
View PDF
|
|
|
| Trench Fiels-Stop IGBT3 Turn-Off - issue 6/2012 |
October, 10 2012 |
| The new Trench-Field-Stop devices show significant differences in control characteristics compared to Power MOSFETs. The reason is the large amount of stored charge, which builds up in the conduction mode.... |
|
View PDF
|
|
|
| Infrared Determination of Junction Temperature and Switching Losses - issue 6/2012 |
October, 10 2012 |
| Junction temperature of power MOSFETs is one of the major criteria to obtain temperature derating curves for power converters... |
|
View PDF
|
|
|
| Past, Present and Future of HPT-IGCT - issue 5/2012 |
September, 25 2012 |
| The integrated gate-commuted thyristor (HPT-IGCT) is a state-of-the-art bipolar turn-off device for high power applications. New devices employing this technology have been released during the past few years and in this article we look at the newest memebr in ABb's portfolio.... |
|
View PDF
|
|
|
| Comparison of 1200V sic Power Switching Devices - 5/2012 |
September, 25 2012 |
| Silicon Carbide (SiC) power semiconductors being actually commercialised and are promising devices for the future. To outline their charcteristics the swithcing and conducting performance of two types of SiC normally-on JFETs, a SiC normally-off JFET two types of SiC MOSFETs and a SiC BJT have been analyzed by means of measurements at exactly the same boudaries... |
|
View PDF
|
|
|
| Static loss Measurement methods for quality improvment - 5/2012 |
September, 25 2012 |
| Steady increase of power for electric converter units leads to the constant enhancement of characteristics and load capacity of power semiconductors. Thus, requirements to the maximum current laod of power thyristors and diodes, limited by heat-release losses in a semiconductor element and the intensity of heat removal from the die are also increasing... |
|
View PDF
|
|
|
| Ultra Low On-Resistance SIC Trench Devices 4/2012 |
July, 12 2012 |
| A new generation of Silicon Carbide (SiC) planar MOSFETs, trench structure Schottky diodes, and trench MOSFETs has been developed. The planar SiC MOSFET technology suppresses the degradation of the parasitic PN junction diodes even if forward current penetrates into the diodes. The trench Schottky diodes exhibit lower forward voltage than conventional SiC diodes while keeping leakage current at an acceptable level. |
|
View PDF
|
|
|
| Silicon Carbide BJT's in Boost Applications 4/2012 |
July, 12 2012 |
| Efficiency is becoming more and more important as well as size and cost. In boost DC/DC converters, typically used in PV inverters and PFC circuits, increased switching frequency makes a big impact on both size and cost. Silicon Carbide (SiC) bipolar junction transistors (BJT's) offer low-loss high speed switching combined with low conduction losses enabling higher switching frequency and maintaining high efficiency. |
|
View PDF
|
|
|
| SiC MOSFETs under High-Frequency Hard Switched Conditions 4/2012 |
July, 12 2012 |
| Silicon carbide (SiC) MOSFETs enable lower system costs by providing the ability to increase power density and frequency of operation, thereby reducing the size, weight and complexity of the system. the first commercial SiC MOSFET was released by Cree in early 2011 and initial demonstrations of its high frequency capability were presented at PCIM 2011. |
|
View PDF
|
|
|
| Wide Bandgap Power Devices in Megawatt Applications 4/2012 |
July, 12 2012 |
| Although researched for many decades, it is only recently that wide bandgap power devices have strated to achieve an acceptable market entry level in term sof overall performance competitiveness in special applications with relatively lower power ratings. Therefore we will discuss the status of SiC in particular in connection with Megawatt aplpications and we will compare the potential benefits and challenges of introducing SiC technology. |
|
View PDF
|
|
|
| Using Trench Power MOSFETs in linear Mode - issue 1/2012 |
February, 28 2012 |
| If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list.... |
|
View PDF
|
|
|
| High Voltage Thyristors for Soft Starters - issue 7/2011 |
January, 26 2012 |
| In spite of significant development of converters on the basis of fully controlled semiconductor stacks (IGBT, GTO, IGCT), today it's still technically legitimate and demandable to use "traditional" high power thyristors in stacks of controlled rectifiers as well as in soft starters for electric motors. Usage of thyristors is especially relevant in case of operating in AC network of 6/10 kV and higher because the devices produced on the basis of such thyristors have no competition. |
|
View PDF
|
|
|
| The GaN Opportunity - Higher Performances and New Challenges, issue 6/2011 |
October, 01 2011 |
| New GaN technology switches offer best in class on-resistance and gate charge, however they need more accurate driving techniques to ensure reliabity and avoid overstresses and failures..... |
|
View PDF
|
|
|
| Recent GaN based power device developments - issue 6/2011 |
October, 01 2011 |
| There is an increasing demand for high power conversion solutions. At the same time, economic political and social pressures are mounting to increase the power delivery efficiency...... |
|
View PDF
|
|
|
| Gallium Nitride for 600V Operation - issue 4/2011 |
July, 13 2011 |
| Especially for mains voltage applications, new efficient 600V class devices are required. These devices are within the main product focus of MicroGaN, as outlined at PCIM.... |
|
View PDF
|
|
|
| High Power IGCT Switches - State-of-the-art and future - issue 3/2011 |
May, 20 2011 |
| Today, ABB's IGCT (Integrated Gate-Commutated-Thyristors) present the best option for medium voltage drives operating at the highest power levels. Combined with optimum switch-off conditions during operation, the switch offers excellent reliability in demainding conditions |
|
View PDF
|
|
|
| Applying Proton Irradiation for performance improvement of Power Semiconductors - issue 3/2011 |
May, 20 2011 |
| Control of recombination features in the layers of the semiconductor element is consiered to be one of the most effective methods to increase performance and many other characteristics of power semiconductor devices..... |
|
View PDF
|
|
|
| Application of Silicon carbide MOSFETs - issue 3/2011 |
May, 20 2011 |
| The Cree SIC MOSFET has removed the upper voltage limit of silicon MOSFETs. However, there are some differences in characteristics when compared to what is usually expected with high voltage silicon MOSFETs. These differecnes need to be carefully addressed to get maximum benefit from the SiC MOSFET.... |
|
View PDF
|
|
|
| Fast Switching IGBTs create new challenges - issue 1/2011 |
May, 04 2011 |
| Fast switching power semiconductors are needed to reduce power losses.A typical system consists of dozens of power semiconductors connected in [arallel that switch several thousands of amperes at DC link voltages in the Kilovolt range.... |
|
View PDF
|
|
|
| New 650V SJ MOSFET with rugged body diode for hard and soft switching applications - issue 2/2011 |
May, 04 2011 |
| The new CoolMOS 650V CFD2 technology combines a high blocking voltage of 650V with lowest with lowest on-resistance and low capacitive losses together with an improved body diode ruggedness during reverse recover especially for hard and soft switching applications....... |
|
View PDF
|
|
|
| Fast Prototyping of Power Converters by Plug-and-Play Capability of SCALE-2 Driver Cores - issue 8/2010 |
December, 20 2010 |
| The new 2BB0108T and 2BB0435T basic boards offer an easy, low cost way to evaluate the 2SC0108T and 2SC0435T gate driver cores with different IGBT modules and technologies by providing plug-and-play capability.... |
|
View PDF
|
|
|
| Third Generation Press-Pack IGBTs and Diodes for Megawatt Applications - issue 6/2010 |
September, 22 2010 |
| Press-pack IGBT technology has come of age with the application of the latest generation of soft punch through die. Background to the evolution of the new generation and its enhanced characteristics are introduced for the largest member of the product family.... |
|
View PDF
|
|
|
| IGBT Gate Driver Solutions for Low and Medium Power Applications - issue 6/2010 |
September, 22 2010 |
| Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output power spectrum: from several hundred watts in small drives up to megawatts in wind power installations or large drive systems.... |
|
View PDF
|
|
|
| Integrated Gate Driver Circuit Solutions - issue 5/2010 |
September, 01 2010 |
| Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output spectrum: from several hundred watts in small drives up to megawatts in wind-power installations or large drive systems. Inside the system the gate driver circuit with it's entensive control and monitoring functions form the interface between the microcontroller and the power switches (IGBT).... |
|
View PDF
|
|
|
| 600/1200V IGBTs set benchmark performance in high switching speed applications |
May, 18 2010 |
| The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimsed for high speed switching in welding, UPS, SMPS and solar applications..... |
|
View PDF
|
|
|
| Can Gallium Nitride Replace Silicon |
April, 28 2010 |
| For the past decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market |
|
View PDF
|
|
|
| New 1200V SPT+IGBT and Diode for Temperature Applications |
December, 14 2009 |
| The application spectrum for the 1200V voltage class chips and modules is increasing worldwide due to the constant increase of power electronic systems present in various fields like automotive, industrial, regenerative power sources etc. ISSUE 8/2009 |
|
View PDF
|
|
|
| Novel 3.5kV Low Loss Rectifier Diode |
October, 19 2009 |
| IXYS introduces a 600A 3 to 3.5kV diode with a low forward voltage drop, low leakage current and with an extremely high surge current rating. The experimental findings are consistent with numerical modelling results and show that by using Aluminium isolation diffusion, it is possible to get an ideal plane parallel breakdown voltage of 3500V. |
|
View PDF
|
|
|
| SiC Device Technologies Predicted Advantages |
September, 16 2009 |
| SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse
the advantages of SiC based power devices over their silicon counterparts, a high volume and standard application segment such as the 400 to 480VAC line rated motor drives is considered to be ideal. |
|
View PDF
|
|
|
| Key Researches on SiC Drive Technologies |
September, 08 2009 |
| SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high-volume and standard application segment such as the 400 to 480VAC line rated motor is considered be ideal. |
|
View PDF
|
|
|
| Next Generation of Power MOSFETs |
May, 12 2009 |
| NexFET technology is a new generation of MOSFETs for power applications with its roots in a laterally diffused MOS (LDMOS) device used successfully for RF signal amplifications. The RF heritage provides minimum internal capacitances, and the vertical current flow offers a high-current density without gate de-biasing issues. By using NexFET switches, a converter’s efficiency can be significantly improved. |
|
View PDF
|
|
|
| High-Speed GaN Switches for Motor Drives 3/2012 |
|
| High speed, low loss, 600V GaN switches offer unique advantages to motor drives. Increased bandwidth
and improved system efficiency can be realized in a range of applications, from workhorse induction motors
to high-performance servos. Jim Honea, Transphorm Inc., Jun Kang, Yaskawa America Inc., USA
There are two benefits for motor drives that come with high switching frequency: one obvious, and one not so obvious. The obvious benefit is increased system
bandwidth. |
|
View PDF
|
|
|
| New SiC Thin-Wafer Technology Paving the Way of Schottky Diodes with Improved Performance and Reliability 3/2012 |
|
| This article presents the new thinQ!TM 5th Generation (G5) of SiC Schottky diodes from Infineon
Technologies. In G5, both the capacitive charge and the forward voltage have been minimized through a
new and exclusive production process. The improvements with respect to previous generations are
discussed, with the support of direct application tests results. Vladimir Scarpa, Uwe Kirchner, Ronny
Kern, and Rolf Gerlach, Infineon Technologies, Villach (Austria) and Neubiberg (Germany) |
|
View PDF
|
|
|
