GeneSiC Semiconductor’s next-generation 1200 V SiC MOSFETs with R_DS(ON) levels ranging from 20 mΩ to 350 mΩ are offered in optimized low-inductance discrete packages (SMD and through hole). The devices are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds.

“After years of development work towards achieving the lowest on-state resistance and enhanced short circuit performance, we are excited to release the industry’s best performing 1200V SiC MOSFETs with over 15 discrete and bare chip products. If the next-generation power electronics systems are to meet the challenging efficiency, power density and quality goals in applications like automotive, industrial, renewable energy, transportation, IT and telecom, then they require significantly improved device performance and reliability as compared to presently available SiC MOSFETs" said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

For datasheet and other resources, visit www.genesicsemi.com/sic-mosfet/

or contact sales@genesicsemi.com