The 650V CoolSiC Hybrid Discrete is for fast switching automotive applications such as on-board chargers (OBC), power factor correction (PFC), DC/DC and DC/AC converters.

The IGBT and Schottky diode combination enable a cost-efficient performance boost as well as high reliability, says the company. They result in a cost-performance trade-off for hard-switching topologies and supports high system integrity as well as bi-directional charging.

The integrated fast switching 50A IGBT enables MOSFET-like turn-off behaviour outperforming pure silicon solutions, says Infineon. In contrast to regular SiC MOSFETs, achieve 95 to 97% system efficiency at a lower cost level, continues the company. The CoolSiC Schottky diode supports reduced turn-on and recovery losses. In comparison to pure silicon designs, the device can be used for hard commutation with 30% lower losses. The diode also has low cooling requirements.

“The CoolSiC Hybrid Discrete allows us to simplify driver design, accelerate product development, lower costs and increase system robustness,” said Xu Jinzhu, R&D Director of VMAX, the Chinese on-board charging supplier. The company uses the CoolSiC Hybrid Discrete in its next-generation OBC/DC/DC system.

 “The integrated silicon carbide diodes without reverse recovery charge further optimise the EMC characteristics of the system. This results in greater performance benefits and a better price/performance ratio in topologies such as totem-pole PFC and DAB,” continued Jinzhu.

The CoolSiC Hybrid Discrete for Automotive is available now.