Features
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
EGaN FETs address e-mobility, drones and robotics
The 80V and 200V additions to EPC’s eGaN FET product family address the new needs of the e-mobility, delivery and logistic robot, and drone markets which use compact brushless DC (BLDC) motor drives and high-resolution time of flight.(ToF).
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The EPC2065 is an 80V, 3.6mΩ, 221 Apulsed eGaN FET in a 7.1mm2 chip-scale package. Its size and efficiency reduce overall power system size and weight in 32 to 48V BLDC motor drive applications for e-mobility e-bikes and e-scooters, service, delivery, logistic robots, and drones. In all of these applications, the driver is integrated with the motor and miniaturisation is a key factor. The ability to operate with significantly shorter dead times results in less noise and less EMI. The device is capable of high frequency operation to achieve the highest density for high frequency DC/DC converters for computing and industrial applications and for synchronous rectification.
The EPC2054 is a 200V, 3.6mΩ, eGaN FET in a 1.69mm2 chip-scale package. The device can deliver 32A pulsed current in this small form factor with very fast on-off transition times and small capacitance and inductances. This makes it suitable for industrial lidar/ToF applications. The low resistance, low switching losses, no reverse recovery charge, fast switching, high frequency capability, and the tiny footprint make the EPC2054 a cost-effective and high-density FET for a wide range of applications including high frequency DC/DC, synchronous rectification, wireless power, class-D audio, automation, solar and optical.
Alex Lidow, EPC’s co-founder and CEO believes that the eGaN FETs will open up new design opportunities. “Power system designers can take advantage of devices that are higher performing, smaller, more thermally efficient, and at a comparable cost,” he said.
A half bridge development board, the EPC90137, is available for the EPC2065 and the EPC9094 half bridge development board is available for the ePC2054. Boards and eGaN FETs are available from Digi-Key.
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