Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3 and MasterGaN5 integrated power packages for applications up to 45 W and 150 W, respectively.

Joining the MasterGaN1, MasterGaN2, and MasterGaN4, which target applications from 65 W to 400 W, the additions give extra flexibility to choose the optimum GaN device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage PFC, and DC/DC converters.

MasterGaN concept simplifies migrating from Silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650 V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80 % smaller than Silicon-based designs as well as extremely robust and reliable.

The GaN power transistors have asymmetrical on-resistance of 225 mΩ and 450 mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450 mΩ for use in topologies such as LLC-resonant and Active Clamp Flyback. In common with other MasterGaN family members, both devices have inputs compatible with logic signals from 3.3 V to 15 V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin.

MasterGaN devices are supported with a dedicated prototype board to help designers jump-start new power-supply projects. The EVALMASTERGAN3 and EVALMASTERGAN5 boards contain circuitry to generate single-ended or complementary driving signals. There is an adjustable dead-time generator, as well as connections for the user to apply a separate input signal or PWM signal, add an external bootstrap diode to help with capacitive loads, and insert a low-side shunt resistor for peak-current-mode topologies.

Housed in a 9 mm x 9 mm GQFN package optimized for high-voltage applications with 2 mm creepage distance between high-voltage and low-voltage pads, MasterGaN3 and MasterGaN5 are in production now, priced from $6.08 for MasterGaN3 and $5.77 for MasterGaN5, for orders of 1000 pieces. AS

www.st.com/mastergan