Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The EPC9162 is by default programmed as a boost converter operating at 12V input to 60V/50W output. The board can also be operated as a buck converter at 48V input to 12V/60W output. The fast-switching speed of eGaN FETs are claimed to significantly reduce switching losses for higher efficiency operation.
EPC advises that a power supply designer can replicate this design, using supporting materials for this board including schematic, bills of materials, and Gerber files available on the EPC website.
Despite the small size, the eGaN FETs have a peak efficiency from 12 to 60V/0.85A is 95.3% and the light load efficiency is 86% with only a 40°C temperature rise, says the company.
“In applications where light-load efficiency is critical, such as LED backlighting for laptops and monitors, the low switching losses of eGaN FETs provide high efficiency with very low temperature rise to prevent equipment overheating,” said Alex Lidow, CEO of EPC.
The EPC9162 demonstration board is available for immediate delivery from distributor, Digi-Key. The demonstration board features the 100 V EPC2052 for the synchronous converter, and the EPC2038 in the synchronous bootstrap FET circuit.
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