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Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
Demo boards evaluate rad-hard GaN devices
![](http://79.170.40.53/power-mag.com/userfiles/image/2022/02-Feb/EPCSPACE PR Graphic 7C005 No text.jpg)
“Radiation Hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices, said Bel Lazar, CEO of EPC Space. He describes the evaluation platform as easy to use and which designers can use when looking to convert rad-hard silicon designs to GaN.
According to EPC Space, rad-hard GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.
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