Toshiba Electronic Devices & Storage Corporation announced on February 4 that it will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base Kaga Toshiba Electronics Corporation. Construction will take place in two phases, with the production start of Phase 1 scheduled within fiscal year 2024. At full capacity, Toshiba’s power semiconductor production capacity will be 2.5 times that of fiscal year 2021.

Current power semiconductor demand is expanding on vehicle electrification and the automation of industrial equipment, with very strong demand for low-voltage MOSFETs and IGBTs and other devices. To date, Toshiba has met this demand growth by increasing production capacity on 200-milimeter lines, and expediting the start of production on 300-milimeter production lines from the first half of fiscal 2023 to the second half of fiscal 2022. Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends. The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines; and the latest energy saving manufacturing equipment to reduce environmental burdens. It will also aim to achieve the “RE100” goal of 100 % reliance on renewable energy. Product quality and production efficiency will be improved by introducing artificial intelligence and automated wafer transportation systems. Going forward, Toshiba will expand its power semiconductor business and boost competitiveness by timely investments and research and development. AS

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