PEE's Panel Discussion "Si vs SiC/GaN - Competition or Coexistence?” at PCIM 2014 on the (Wednesday, May 21, 2.00 – 4.00 pm) Industry Forum Hall 6 booth 340.

Silicon Carbide and more recently Gallium Nitride have gained more and more interest by power electronics designers particularly for inverter and power supply applications. But Silicon technology is still moving forward.

Thus the intention of this panel discussion is to inform PCIM visitors about the pros and cons of SiC and GaN in relation to progress in Si also in certain applications such as power supplies, wireless power, drives and renewable energies, about company-specific technologies and product roadmaps, and last but not least market trends.

After a general introduction of the subject and market trends by the moderator a series of questions (technology) will be addressed to all panelists, followed by an open discussion between panelists and auditorium. Finally, an other series of questions (applications) will addressed to all panelists, followed by open discussion and closing remarks.

Moderator: Achim Scharf, Power Electronics Europe

This panel discussion features 10 panelists and is intended as a so-called Rap Session not provided by the PCIM Conference and thus certainly of interest for the conference delegates as well because it provides an unique opportunity to gain first-hand informations about the latest technologies and product developments.

ABB - Munaf Rahimo, Principal Engineer

Cree - John Palmour, CTO

EPC - Alex Lidow, CEO

Infineon - Gerald Deboy, Senior Principal für Power Management & Supply Discretes Power Semiconductors and System Engineering

International Rectifier - Michael Briere, Consultant

Mitsubishi Electric - Gourab Majumdar, CTO/Fellow

Semikron - Thomas Grasshoff, Head Intern. Product Management

ST Microelectronics - Jean-Roger Hecquefeuille, Rectifier Product Marketing Manager, ASD & IPAD Division

Toshiba Europe - Georges Tchouangue, Chief Engineer Power Semiconductors

Transphorm - Primit Parikh, President