According to EPC, using the EPC23102 integrated GaN-on-silicon IC offers higher performance in a smaller footprint with “significantly reduced design effort requirements” to accelerate time to market. The fully integrated power stage IC has 100V rating and includes half bridge FETs, driver, level shifter, and synchronous bootstrap charging, with an enable pin for low quiescent current in disabled mode and 5V bias.

The EPC9176 inverter mates with compatible controllers and is supported by various manufacturers’ resources to aid quick development and to reduce design cycle times.

The EPC9176 contains all the necessary critical functions circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions.

Interface boards (EPC9147X) enable the inverter reference design to operate with the most common motors.

“Designers can use GaN ICs to make lighter weight and more efficient battery-operated motor drives for a wide variety of e-mobility and robotic applications”, says Alex Lidow, EPC’s CEO.

The EPC9176 reference design board is available for immediate delivery from Digi-Key.

Designers interested in replacing their silicon MOSFETs with a GaN device can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement.