Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The RCD2 IGBTs are combined with an SoI (silicon-on-insulator) gate driver to lower system power dissipation. The three-phase inverter configurations with open emitters are integrated in a DIP 36 x 21mm package which has been specially adapted to power applications which need good thermal conduction and electrical isolation. The series is claimed to exhibit best-in-class switching loss and deliver “excellent” energy efficiency especially in applications with high switching frequency.
The devices are available in current ratings from 6.0 to 17A, with a breakdown voltage of 600V. A built-in, UL-certified NTC thermistor for temperature monitoring, undervoltage lockout (UVLO) at all channels and overcurrent protection are also included to enhance the system reliability.
Package and mould compound offer improved humidity robustness while an integrated bootstrap circuit simplifies the PCB layout.
The industry-standard package allows for easy and fast design conversion of existing Mini IPMs (P2P) without PCB redesign, to shorten time-to-market, adds the company.
Volume production of the CIPOS Mini IM523 series was started and the devices are available for order now.
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