The 80V, 4mΩ EPC2619 GaN FET is supplied in a 1.5 x 1.5mm footprint. It is claimed to offer higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC/DC conversion, motor drives, and synchronous rectification for 12 to 20V.

The maximum RDS(on) x area is 15 mΩ*mm² which is five times smaller than 80V silicon MOSFETs. It can be used in motor drive applications, for example 28 to 48V conversion for e-bikes, e-scooters and power tools, high density DC/DC converters, solar optimisers and synchronous rectification converting 12 to 20V for chargers, adapters and TV power supplies.

The typical RDS(on) x QGD, which is indicative of power losses in hard switching applications, is 10 times better than 80V silicon MOSFETs. Switching frequencies are 10 times higher than silicon MOSFETs and without an efficiency penalty to increase power density. The eGaN FET is suitable for high frequency hard switching 24 to 48V applications, such as used in buck, buck-boost and boost converters.

The typical RDS(on) x QOSS, which is indicative of power losses in soft switching applications, is 87mΩ*nC. This is two times better than 80V silicon MOSFETs, says EPC, and makes the FET suitable for soft switching applications, such as the primary rectification full bridge for LLC-based DCX DC/DC converters.

The EPC90153 development board is a half bridge featuring the EPC2619 GaN FET. It is designed for 80V maximum device voltage and 30A maximum output current. The 50.8 x 50.8mm (2.0 x 2.0 inch) board contains all critical components for easy evaluation.