The 650V SiC MOSFETs are for industrial applications such as solar inverters, motor drives, industrial power supplies and new energy storage systems. The AEC-Q101-qualified 750V SiC MOSFETs are designed for high-reliability, for example the on-board charger and main traction inverter in electric vehicle (EV) systems.

The AOM015V75X2Q 750V aSiC MOSFET expands the company’s second generation 1200V aSiC MOSFET and diode products with low RDS(ON) down to 15mW in a standard TO-247-4L package while maintaining a 15V gate drive voltage for compatibility with existing gate drivers. The minimised internal gate resistance and optimised cell design, exhibit fast switching speeds that are controllable with an external gate resistor.  This benefit is also noticeable in standard switching figures-of-merit (FoM) such as RON x QGD and RON x QRR that are improved compared to existing 750V SiC MOSFETs, says the company.

In particular, the aSiC MOSFETs exhibit an increase in short circuit withstand time (SCWT) for planar SiC MOSFETs.  For many applications, and especially in EV inverters, a longer SCWT can improve the system’s ruggedness and give developers more design flexibility. To achieve an increase in SCWT, it is typically necessary to also significantly increase the die size of the product, which can impact system costs. The company reports that the 750V MOSFETs have maintained a similar or lower RON x A while demonstrating a greater than 40% increase in SCWT, compared to similarly-sized competitive products.

Maximum operating junction temperature is up to 175°C.

The initial 750V automotive series aSiC MOSFET products (AOM015V75X2Q, AOM060V75X2Q), and industrial 650V series (AOM015V65X2, AOM060V65X2) will be available for orders in Q4/2022.