The EPC2305 and EPC2304 GaN FETs offer the industry’s lower RDS(on), says Efficient Power Conversion (EPC). The 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs are supplied in a thermally enhanced QFN package with exposed top and small footprint of just 3.0 x 5.0mm. The higher efficiency, reduced size and weight and reliability make them suitable for use in solar optimisers and microinverters, advises EPC, as well as for drivers for e-scooters, e-mobility, robots, as well as forklifts and power tool motor drives.

The GaN FETs deliver low on-resistance at 150V and 200V and the QFN is 15 times smaller than alternative Si MOSFETs, says EPC. The Qg, Qgd and Qoss are more than three times smaller than Si MOSFETs, says the company, with a reverse recovery charge (Qrr) of zero.

The FETs result in switching losses that are six times smaller in both hard switching and soft switching applications, says the company. The driver losses are three times less than silicon solutions and ringing and overshoot are both significantly reduced, the company adds.

For sinusoidal BLDC motor drives, the GaN FETs enable <20ns deadtime and higher frequency to reduce noise, minimise size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors and increase motor and driver efficiency more than 8% by eliminating vibrations and distortions. Suitable applications are drives for e-scooters, e-mobility, robots, as well as forklifts and power tool motor drives.

For DC/DC conversion operating from 80 to 20V, the EPC2304 and EPC2305 enable higher switching frequency and up to five times higher density and higher efficiency to simplify cooling.

Both are footprint-compatible with the 100 V, 1.8mΩ EPC2302, the 100V, 3.8mΩ EPC2306, and the 150V 4.9mΩ EPC2308.

“Designers can use this family of products for smaller and lighter weight BLDC motor drives, smaller and more efficient DC-DC converters, solar optimisers and microinverters, and higher power density USB chargers and power supplies,” says Alex Lidow, co-founder and CEO of EPC.

The company also offers the EPC90140 development board, featuring the EPC2304 GaN FET and the EPC90143 development board featuring the EPC2305 GaN FET. Both measure 2.0 x 2.0 inch (50.8 x 50.8mm).

The FETs and boards are available for immediate delivery from Digi-Key.