The L-TOGL packages and its resulting heat dissipation characteristics mean that the MOSFETs are highly optimised for handling large currents, says the company. They each feature high drain current ratings (400A for the XPQR3004PB and 200A for the XPQ1R004PB), with what are claimed to be industry-leading on-resistance values (0.3mΩ for the XPQR3004PB and 1mΩ for the XPQ1R004PB).

There is no internal post structure (solder connection) because the source and outer leads are connected via a copper clip. A multi-pin structure used for the source leads reduces the package resistance (and associated losses) by about 70%, compared with the existing TO-220SM(W) package. The drain current (ID) rating of the XPQR3004PB, represents a 60% increase over the existing TKR74F04PB, housed in the TO-220SM(W) package. The thick copper frame reduces junction-to-case thermal impedance to 0.2°C/W for the XPQR3004PB and 0.65°C/W for the XPQ1R004PB to ease heat dissipation, lower operating temperatures and enhance reliability.

The AEC-Q101-qualified MOSFETs operate in automotive applications at temperatures up to 175°C. The gull-wing leads reduce mounting stress and allow easy visual inspection to help improve the solder joint reliability.  

When used in high current automotive applications, such as semiconductor relays or integrated starter generators (ISGs), the MOSFETs can simplify designs and reduce the number of MOSFETs required, says Toshiba, contributing to size, weight and cost reductions.

Both MOSFETs are shipping in volume now.