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They are characterised by a maximum VDSS rating of 150V and current handling of 64A. The MOSFETs have low drain-source RDS (on) of just 9.0mΩ (max). This is over 40% less than is possible with the TPH1500CNH1 MOSFET, the previous generation device.

For high performance power devices using synchronous rectification, reverse recovery performance is highly important, Toshiba advises. The TPH9R00CQ5 MOSFET includes a high speed body diode which reduces the reverse recovery charge (Qrr) by around 74% (to 34nC typical) when compared to an existing device such as the TPH9R00CQH. The reverse recovery time (trr) is just 40ns which is an improvement of over 40% compared with earlier devices, reports the company.

Gate charge (Qg) is just 44nC, further contributing to reduced losses and increased power density. Unusually for a MOSFET, the channel temperature is 175°C (max) which, combined with the high speed diode will offer the designer increased thermal headroom.

The MOSFET also reduces spike voltages created during switching, thereby improving EMI characteristics of designs and reducing the need for filtering.

The TPH9R00CQ5 is housed in a surface-mount SOP Advance(N) package measuring just 4.9 x 6.1 x 1.0mm.

Toshiba has also developed a G0 SPICE model for rapid verification of the circuit function. There are also G2 SPICE models for accurate reproduction of transient characteristics.

In addition, there are reference designs, including a 1kW non isolated, buck-boost DC/DC converter, a three-phase multi-level MOSFET-based inverter and a 1kW full bridge DC/DC converter, all of which use the TPH9R00CQ5.

The TPH9R00CQ5 MOSFET is shipping now.

Visit Toshiba Electronics Europe at PCIM Europe 203 – Hall 9 - 503