The first device in the 600V DTMOSVI series N-channel power MOSFETs is the TK055U60Z1, based on Toshiba’s latest-generation process with a super junction structure. 

MOSFET features an R_DS(on) of only 55mΩ which is a 13% improvement over similar devices in the DTMOSIV-H series. In addition, the R_DS(on) x Q_gd is improved by approximately 52%, says the company. The MOSFET is suitable for high efficiency switching power supplies in data centres, power conditioners for photovoltaic generators, and uninterruptible power supplies. 

Available in the popular TOLL package with a Kelvin connection for the signal source terminal, the source wire's inductance has less impact, reducing switching oscillation and to improve switching performance when the MOSFET operates at high gating speeds. The applied pin shaping ensures proper solder connections, increases mounting reliability and makes visual inspection easier.

The maximum channel temperature (T_ch) of the new product is 150°C. The typical R_DS(on) of 47mΩ is specified at a gate source voltage of 10V.

Typical total gate charge (Q_g), gate-drain charge (Q_gd) and input capacitance (C_iss) are 65nC, 15nC and 3680pF, respectively to switch at the fastest possible speeds, says the company. 

Toshiba confirmed that more devices will be added to the 600V DTMOSVI series.