The 650 to 1200V SiC Schottky barrier diodes (SBDs) carry currents from 6.0 to 10A  and feature thermal capabilities and high power density to meet high frequency and high current design requirements.

The six models in the Bourns BSD SiC SBD line are optimised for reliable, high efficiency power conversion in high frequency applications that need to meet reduced size and lower system cost requirements. Target applications are telecomms or server switch mode power supplies (SMPS), photovoltaic inverters as well as PC power and motor drives.

To address design demands for ever higher power efficiency, the SiC SBDs feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, satisfying application requirements of 650V and 1200V solutions, explains Bourns. The series also has no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 to 1200V operation with 6.0 to 10A current range, the wide band gap diodes offer forward voltage, current and package options including TO220-2, TO247-3, TO252, and DFN8x8.

All six BSD SiC SBDs are available now. These models are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.