The new OptiMOS 6 power MOSFET 40V (ISK057N04LM6) with 5.7mΩ RDS(on) and OptiMOS 5 power MOSFETs 25 V (ISK024NE2LM5) and 30V (ISK036N03LM5) with 2.4mΩ and 3.6mΩ RDS(on), respectively, are available in the improved PQFN 2x2 mm² package and can be ordered now.

The two new power MOSFETs are claimed to be best in class OptiMOS power MOSFETs to achieve a small footprint and with higher power density for layout routing flexibility and overall system size reduction.

The OptiMOS 6 40V and OptiMOS 5 25V and 30V power MOSFETs are intended for applications such as synchronous rectification in switched mode power supplies (SMPS) for servers, telecomms and portable and wireless chargers, as well as electric speed controllers for small brushless motors in drones.

Infineon says the new OptiMOS 6 40 V and OptiMOS 5 25V and 30V power MOSFETs offer leading-edge silicon technology, package reliability and superior thermal resistance (R thJC, max = 3.2 K/W) in the small PQFN 2x2mm² package. They combine low on-resistance RDS(on) with what Infineon says are industry-leading figures of merit (FOMs, Q G and Q OSS) for “outstanding dynamic switching performance”. The low switching and reduced conduction losses ensure optimal energy efficiency and power density, and also simplify thermal management, adds the company.

The compact PQFN package outline allows smaller, more flexible geometric outlines for end-user applications, continues Infineon. The MOSFETs also require less need for paralleling in a design which “significantly” reduces space and system cost.