Designed for energy-efficient power applications, the discrete 650V IGBT7 H7 variant has an EC7 co-packed diode with an emitter-controlled design. The trench technology is claimed to result in “significant loss reduction”, improved efficiency and higher power density than earlier models.

It is intended for use in high power applications, including string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

It is supplied in a discrete package and delivers 40 to 150A, depending on the model. There are four package types available - TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC Trenchstop IGBT 7 H7 features a high creepage distance, says Infineon and the four-pin packages also deliver lower voltage overshoot, minimsed conduction losses and the lowest reverse current loss, says the company. These features enable the Trenchstop IGBT 7 H7 to simplify  design and minimise the need to connect devices in parallel.

The 650V Trenchstop IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. It is qualified for industrial use according to the relevant tests of JEDEC47/20/22, including HV-H3TRB, making it suitable for outdoor applications. The IGBT is designed to meet the demand for green and efficient power applications and complement for the NPC1 topology often used in applications such as solar and ESS.

The Trenchstop IGBT 7 H7 can be ordered now. Qualification samples are also available.