Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Low breakdown voltage is essential for ESD protection devices, especially when protecting ICs manufactured with the finest process, explains the company. This TVS diode features an especially low breakdown voltage, and it can provide a faster response time compared to conventional snap-back devices, enabling it to absorb ESD energy extremely quickly to avoid damage to the IC and surrounding components.
The single-channel device is housed in a 0.6 x 0.3mm leadless surface-mounted device (SMD) package which makes it well-suited to meet the small footprint requirements of USB Type-C connectors, adds the company.
According to AOS’ marketing director, Charles Chen, the AOZ8S207BLS-01 provides “a much better figure of merit (FOM) on clamping voltage times capacitance”.
“In addition to low capacitance, having a lower clamping voltage and faster response during an ESD event is important to protect today’s more ESD-sensitive chipsets,” and help designers to “greatly reduce ESD failure rates in their electronic products”.
The AOZ8S207BLS-01 TVS diode is immediately available in production quantities with a lead time of 16 weeks.
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