Features
MHz switching frequency-based devices enable miniaturization of the DC-DC converter and EMI filters
Achieving EMI conducted emission compliance for automobiles with a single stage filter. By Nicola Rosano, Sr. Strategic FA/System Engineer at Vicor
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
GaN device adopted in 45W Output USB-C Charger
The company hasannounced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta , a global provider of IoT-based Smart Green Solutions headquartered in Taiwan. ROHM’s EcoGaN™ device claims to contribute to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.
Efforts to save energy are accelerating toward achieving a sustainable society by reducing power loss, especially in equipment that handle high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies, since high frequency operation not only saves energy but also allows the use of smaller circuits.
Offering GaN-based devices under the brand name EcoGaN™, ROHM is claiming to be advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (RDS(ON) × Ciss / RDS(ON) × Coss). On top, integrating an ESD protection element into theGNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.
For more information contact: www.rohm.com
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Efforts to save energy are accelerating toward achieving a sustainable society by reducing power loss, especially in equipment that handle high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies, since high frequency operation not only saves energy but also allows the use of smaller circuits.
Offering GaN-based devices under the brand name EcoGaN™, ROHM is claiming to be advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (RDS(ON) × Ciss / RDS(ON) × Coss). On top, integrating an ESD protection element into theGNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.
For more information contact: www.rohm.com
View PDF
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