the comapny has announced four new1200V silicon carbide (SiC) modules - two half-bridge and two full-bridge - in a compact E1B package with R_DS(on) starting at 9.4mΩ. These highly efficient SiC modules are claimed to be ideal solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.

They claim the modules in this new family can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design as well as assembly. Our cascode technology also allows higher switching frequency operation, further reducing solution size by using smaller external component.  They further assert that the high efficiency of these modules streamlines the power supply design process so they can focus on the design, layout, assembly, characterization and qualification of one module as opposed to numerous discrete components.

Led by the 9.4mΩ UHB100SC12E1BC3N, these four SiC modules leverage Qorvo’s unique cascode configuration, claiming to minimise R_DS(on) and switching losses to maximize efficiency, especially in soft-switching applications. Silver-sinter die attach reduces thermal resistance to as low as 0.23 °C/W; when combined with the stacked die construction found in the “SC” part numbers, power cycling performance is potentially improved significantly.

The table below provides a snapshot of Qorvo's new 1200V SiC module family: