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Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
 
STMicroelectronics to build the world’s first fully integrated silicon carbide facility in Italy
 
STMicroelectronics has announced the build of a new high volume 200mm silicon carbide (“SiC”)
manufacturing facility to be built in Catania, Italy. Combined with the SiC substrate manufacturing
facility being readied on the same site, these facilities will form Sthe company's Silicon Carbide Campus,
creating a fully vertically integrated manufacturing facility for the massproduction of SiC on one site.
The creation of the new Silicon Carbide Campus is a key milestone to
support customers for SiC devices across automotive, industrial and cloud infrastructure
applications, as they transition to electrification and seek higher efficiency.

The new facility is targeted to start production in 2026 and to ramp to full capacity by 2033, with up
to 15,000 wafers per week at full build-out. The total investment is expected to be around five billion
euros, with a support of around two billion euros provided by the State of Italy within the framework
of the EU Chips Act. Sustainable practices are integral to the design, development, and operation of
the Silicon Carbide Campus to ensure the responsible consumption of resources including water
and power.

for more information visit: www.st.com


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