Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, price-competitive, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced it has expanded its portfolio with two 100V automotive-grade GaN devices.

The company says its INN100W135A-Q (R_DS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (R_DS(on),max = 80 mΩ) are both certified to AEC-Q101 and optimised for LiDAR as well as for high power density DC-DC converters, and Class D audio applications in the automotive sector.

Innoscience says the INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2 /L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of  200/300m, essential for advanced driver assistance and autonomous driving applications.

Dr. Denis Marcon, General Manager, Innoscience Europe comments: “Both devices have been designed to meet the growing demand for efficiency and precision in driving assistance and autonomous driving technologies – GaN devices are rapidly replacing traditional silicon in critical automotive applications due to their superior performance. In LiDAR applications, it is well-understood that GaN enables higher resolution and greater detection distances while reducing power loss and temperature rise than is possible with traditional silicon technology.”

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