The company says by using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R _DS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings.

 “We are thrilled to partner with Enphase and support their mission to deliver innovative solar energy solutions,” said Richard Kuncic, Senior Vice President and General Manager at Infineon.

 “Our 600 V CoolMOS 8 SJ MOSFETs are designed to provide superior efficiency, reliability, and cost savings, which aligns perfectly with Enphase’s and Infineon’s commitment to advancing the performance and affordability of renewable energy technologies, further driving decarbonisation.”

 “Collaborating with Infineon has allowed us to leverage their CoolMOS 8 SJ MOSFET technology to enhance the performance and cost-effectiveness of our microinverter systems,” said Aaron Gordon, Senior Vice President and General Manager of the Systems Business Unit at Enphase Energy. “This partnership underscores our dedication to innovation and excellence in the solar energy industry, and we are excited about the significant improvements in power density and cost savings that we are now able to offer our customers.”

Infineon says its latest CoolMOS 8 MOFETs at 600 V are leading the way in high-voltage superjunction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale. The technology increases overall system performance and further reinforces decarbonisation in applications such as chargers and adapters, solar and energy storage systems, EV charging, and uninterruptible power supplies (UPS).

 The CoolMOS 8 SJ MOSFETs are said to have an 18% lower gate charge than the CFD7 and 33% lower than the P7 series. A reduced gate charge allows for less electric charge to be applied to the gate of a MOSFET to switch it from the off state (non-conducting) to the on state (conducting), enabling a more energy-efficient system performance. Additionally, the CoolMOS 8 SJ MOSFETs have the quickest turn-off time in the market and their thermal performance has been improved by 14 to 42% compared to the previous generation. The 600 V CoolMOS 8 SJ technology is equipped with an integrated fast body diode and is available in SMD-QDPAK, TOLL, and Thin-TOLL 8x8 packages, making it suitable for a wide range of consumer and industrial applications.