An automotive-qualified, high current, dual low-side driver IC, the AUIRB24427S, targets switched mode power supplies in HEVs (hybrid electrical vehicles), EVs (electric vehicles), and high power industrial converters. According to International Rectifier, the IC features very high output current - in excess of 6A per channel - across the full temperature range and is designed to drive large IGBT and MOSFET gates in modules or discrete packages. The low output impedance in turn-on and turn-off mode, means that power losses are low, allowing operation in harsh and high temperature environments such as HEV power supply stages as a primary or secondary side driver, says the company. Housed in a PSOIC-8N package and featuring low power dissipation, the IC, according to the company, solves the problem of effectively driving large size IGBTs and MOSFETs used in high power SMPS applications, delivering much higher thermal dissipation compared to standard DIL SMD packages, enabling operation at a significantly higher ambient temperature. The rail-to-rail output stage, using P-channel MOSFETs in the high-side allows low internal dropout voltage to reduce power dissipation. Maximum output resistance is 650mΩ sink and source at 125°C.

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