Features
MHz switching frequency-based devices enable miniaturization of the DC-DC converter and EMI filters
Achieving EMI conducted emission compliance for automobiles with a single stage filter. By Nicola Rosano, Sr. Strategic FA/System Engineer at Vicor
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed
ROHM has announced the release of new Level 3 (L3) SPICE models that can deliver significantly improved convergence and faster simulation performance.
Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM says its earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.
The company says the new L3 models utilise a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM says it has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
View PDF
Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM says its earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.
The company says the new L3 models utilise a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM says it has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
View PDF
| Home / News / Features / Events / Media Data / Issue Archive / Magazine Subscription / Contact Us
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media